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首页> 外文期刊>WSEAS Transactions on Circuits and Systems >Nanometric layers of Cadmium sulphide by CBD and a Potential Application
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Nanometric layers of Cadmium sulphide by CBD and a Potential Application

机译:CBD对硫化镉的纳米层及其潜在应用

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We presented an application of nanometric layers of Cadmium Sulphide developed using Chemical Bath Deposition (CBD) technique for the growth of the CdS thin films. The thin films of CdS were synthesized employing two different complexing agent, acetylacetone and glycine. In this paper we compare the results of the thin films characterization with both complexing agent and the CdS thin film growth with glycine was selected in order to develop a Thin Film Transistor (TFT). The energy bandgaps in these cases were Eg = 2.53 eV using glycine as complexing agent, and Eg = 2.37eV using acetylacetone as complexing agent. An hexagonal polycrystalline structure concerning to the X-ray analysis results for both processes, from those studies were calculated their grain sizes by the model of Debye-Scherrer, resulting 3 nm for the acetylacetone process and 30 nm for the glycine process. Also we started with the computational analysis and preliminary results are presented.
机译:我们介绍了使用化学浴沉积(CBD)技术开发的硫化镉纳米层在CdS薄膜生长中的应用。使用两种不同的络合剂乙酰丙酮和甘氨酸合成CdS薄膜。在本文中,我们比较了用络合剂表征薄膜的结果和选择使用甘氨酸的CdS薄膜生长以开发薄膜晶体管(TFT)的结果。在这些情况下,使用甘氨酸作为络合剂的能带隙为Eg = 2.53 eV,使用乙酰丙酮作为络合剂的能带隙为Eg = 2.37eV。通过Debye-Scherrer模型,通过研究得出了与这两个过程的X射线分析结果相关的六角形多晶结构的晶粒尺寸,得出乙酰丙酮过程为3 nm,甘氨酸过程为30 nm。我们也从计算分析入手,并给出了初步结果。

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