New Growth Processes for Nanometric layers of Cadmium sulphide by CBD and a Potential Application.

摘要

In this work were explored two complex agents for growth CdS thin films by using chemical bath deposition. The first one - acetylacetone - lead us a homogeneous thin films, with hexagonal structure, 2.37 eV of energy bandgap and grain size of 3 nm. Whereas, for the second compound - glycine - the films also show hexagonal structure with high purity, high hexagonal crystallographic orientation, 2.53 eV of energy bandgap, grain size of 30 nm and 2.3 nm of surface roughness. Some morphology images are presented as well as the current behavior versus the voltage for a thin film transistor device (TFT), built in its gate structure, by CdS grown with glycine.