Stability of Mo/Si and Pd/Si multilayers irradiated by synchrotron radiation

摘要

Recently, soft X-ray optics was developed rapidly as a result of many synchrotron radiation (SR) facilities constructed and applied. But the SR with high energy density will make the temperature rise of inserted elements very high. Because of the acceleration effect of chemical reaction caused by radiation, the stability of periodic multilayers which are used as reflective and dispersive elements in SR should be studied carefully, Jiang et al. reported that there were interfacial reactions and grainsgrowth in Mo/Si multilayer when it was annealed above 400°C, causing the intensity of X-ray diffraction decreased (especially the high-order peaks, whose intensity could change several times). Yin et al. reported the same phenomena in Pd/Si multilayerabove 200°C, and Tu et al. found the Pd film could react with c-Si to form Pd_2Si from 100 to 700 °C.