We report a resonant tunneling diode (RTD) small signal equivalent circuit model consisting of quantum capacitance and quantum inductance. The model is verified through the actual InAs/In0.53Ga0.47As/AlAs RTD fabricated on an InP substrate. Model parameters are extracted by fitting the equivalent circuit model with ac measurement data in three different regions of RTD current-voltage (I-V) characteristics. The electron lifetime, representing the average time that the carriers remain in the quasibound states during the tunneling process, is also calculated to be 2.09 ps.
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机译:我们报告了一个由量子电容和量子电感组成的谐振隧道二极管(RTD)小信号等效电路模型。通过在InP衬底上制造的实际InAs / In0.53Ga0.47As / AlAs RTD验证了该模型。通过在RTD电流-电压(I-V)特性的三个不同区域中用交流测量数据拟合等效电路模型来提取模型参数。电子寿命也被表示为2.09 ps,该电子寿命表示载流子在隧穿过程中保持在准结合状态的平均时间。
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