Nanoscale resistive switching memory device composed of NiO nanodot and graphene nanoribbon nanogap electrodes

摘要

We report a nanoscale resistive random access memory (RRAM) device consisting of a NiO nanodot and graphene nanoribbon (GNR) nanogap electrodes. The GNR nanogap was established by an electroburning process induced by applying voltage ramp stress between the two ends of the GNR. A NiO nanodot was then deposited between the nanogapped GNR electrodes by an elaborately controllable dip pen lithography method using a nickel carbonate [Ni2(CO3)(OH)2] solution. The nanoscale GNR/NiO/GNR RRAM device exhibited reliable unipolar resistive switching characteristics with low SET/RESET voltages and currents, which might be the result of its miniaturized size and well-defined Ohmic contacts between the NiO nanodot and GNR electrodes.