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Low temperature growth mechanisms of vertically aligned carbon nanofibers and nanotubes by radio frequency-plasma enhanced chemical vapor deposition

机译:射频等离子体增强化学气相沉积法垂直排列碳纳米纤维和纳米管的低温生长机理

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摘要

Using radio frequency-plasma enhanced chemical vapor deposition (RF-PECVD), carbon nanofibers (CNFs) and carbon nanotubes (CNTs) were synthesized at low temperature. Base growth vertical turbostratic CNFs were grown using a sputtered 8 nm Ni thin film catalyst on Si substrates at 140 °C. Tip growth vertical platelet nanofibers were grown using a Ni nanocatalyst in 8 nm Ni films on TiN/Si at 180 °C. Using a Ni catalyst on glass substrate at 180 °C a transformation of the structure from CNFs to CNTs was observed. By adding hydrogen, tip growth vertical multi-walled carbon nanotubes were produced at 180 °C using FeNi nanocatalyst in 8 nm FeNi films on glass substrates. Compared to the most widely used thermal CVD method, in which the synthesis temperature was 400-850 °C, RF-PECVD had a huge advantage in low temperature growth and control of other deposition parameters. Despite significant progress in CNT synthesis by PECVD, the low temperature growth mechanisms are not clearly understood. Here, low temperature growth mechanisms of CNFs and CNTs in RF-PECVD are discussed based on plasma physics and chemistry, catalyst, substrate characteristics, temperature, and type of gas.
机译:使用射频等离子体增强化学气相沉积(RF-PECVD),在低温下合成了碳纳米纤维(CNF)和碳纳米管(CNT)。在140°C下,使用溅射的8 nm Ni薄膜催化剂在Si基片上生长垂直生长的垂直层状CNF。尖端生长垂直血小板纳米纤维是使用Ni纳米催化剂在180°C的TiN / Si上的8 nm Ni膜中生长的。在180°C的玻璃基板上使用Ni催化剂,观察到结构从CNF转变为CNT。通过添加氢,使用FeNi纳米催化剂在玻璃基板上的8 nm FeNi薄膜中,在180°C的条件下,生长出尖端生长垂直的多壁碳纳米管。与最广泛使用的热CVD方法(合成温度为400-850°C)相比,RF-PECVD在低温生长和控制其他沉积参数方面具有巨大优势。尽管通过PECVD在CNT合成中取得了重大进展,但低温生长机理尚不清楚。在此,基于等离子体物理和化学,催化剂,基底特性,温度和气体类型,讨论了RF-PECVD中CNF和CNT的低温生长机理。

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