Numerical approach for depth profiling with GE-XRF

摘要

The atomic percentage of implanted particles on the sample surface was estimated from the peak position of angle dependency of the experimental grazing exit X-ray fluorescence (GE-XRF) intensity profile. An algorithm for constructing three-parametric Gaussian-type depth profiles of atoms implanted in a substrate was developed. The position of the maximum and its value of the implanted particles distribution as well as a dispersion of that distribution were considered in the calculations. The model was applied to the intensity of the As K alpha line emitted from As atoms implanted in a Si wafer. The least-square method was used to minimize the overall difference between experimental and calculated GE-XRF intensity. Optimum parameters of the particle distribution were determined in this procedure. Using that profile, the depth dependencies of effective real and imaginary parts of atomic scattering factor and complex index of refraction of the sample material were evaluated. Copyright (c) 2006 John Wiley & Sons, Ltd.