Study of TiN films by filtered cathodic vacuum arc techniques

摘要

Thin TiN was grown on Si wafers (100) using afiltered cathodic vacuum arc technique. The films werecharacterised by their structural and mechanical behaviour. It wasfound that the properties of the deposited films are stronglydependent on the bias applied to the substrate. An increasingnegative substrate bias results in a decrease in film compressivestress from 7.5 to 3.5 Gpa and in hardness from 27.5 to 18.5 Gpa,X-ray diffraction shows a preferred alignment from the (200) tothe (111) diRECtion with increasing negative substrate bias.Atomic force microscopy results also show increasing surfaceroughness and grain size.