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首页> 外文期刊>Surface and Interface Analysis: SIA: An International Journal Devoted to the Development and Application of Techniques for the Analysis of Surfaces, Interfaces and Thin Films >Hydrogen desorption kinetics from H-Si (111) surfaces studied by optical sum frequency generation and second harmonic generation
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Hydrogen desorption kinetics from H-Si (111) surfaces studied by optical sum frequency generation and second harmonic generation

机译:通过光和频率产生和二次谐波研究H-Si(111)表面的氢解吸动力学

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摘要

We have studied hydrogen desorption from a flat H-Si (111)1x1 surface at 711K by observing sum frequency generation (SFG) and second harmonic generation (SHG) spectra. Flat H-Si (111) surfaces were prepared by dosing hydrogen molecules in an ultra-high vacuum chamber with a base pressure of ?10(-8)Pa. Combining the SFG and SHG methods, the desorption order has been clarified over the whole hydrogen coverage range from 1 monolayer (ML) to 0ML. The hydrogen desorption was assigned as second order in the high coverage range of 1ML-0.18ML by using SFG spectroscopy and as first order in the coverage range of 0.18ML-0.0ML by using SHG spectroscopy. Copyright (c) 2016 John Wiley & Sons, Ltd.
机译:我们已经通过观察总和频率产生(SFG)和二次谐波产生(SHG)光谱研究了在711K下从平面H-Si(111)1x1表面脱氢的过程。通过在超高真空室中将氢分子定量加入到基本压力为?10(-8)Pa的情况下制备平坦的H-Si(111)表面。结合SFG和SHG方法,已阐明了从1个单层(ML)到0ML的整个氢覆盖范围的解吸顺序。通过使用SFG光谱,氢解吸在1ML-0.18ML的高覆盖范围内分配为第二级,通过使用SHG光谱在0.18ML-0.0ML的覆盖范围内分配为一级。版权所有(c)2016 John Wiley&Sons,Ltd.

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