Valence-band offsets of III-V alloy heterojunctions

摘要

Valence band offsets at the heterointerface of lattice-matched alloy semiconductors are investigated with theoretical calculation, which is based on average bond energy theory in conjunction with a cluster expansion method. The predicted relative valence band positions of a wide range of III-V alloys are presented. The variation law of valence band offsets with composition is studied. Some trends of relative valence band positions are also presented. The theoretical results are in very good agreement with relevant experimental data. The table and figures summarizing the variation of valence band positions should be very useful in the of novel heterostructure electronic and optical devices.