首页> 外文期刊>Surface and Interface Analysis: SIA: An International Journal Devoted to the Development and Application of Techniques for the Analysis of Surfaces, Interfaces and Thin Films >Surface characterization of tungsten and tungsten carbide-cobalt probe materials for a fine-pitch four-point probe by variable excitation XPS using synchrotron radiation
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Surface characterization of tungsten and tungsten carbide-cobalt probe materials for a fine-pitch four-point probe by variable excitation XPS using synchrotron radiation

机译:通过使用同步加速器辐射的可变激发XPS对用于细间距四点探针的钨和碳化钨-钴探针材料进行表面表征

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摘要

In the course of the development of a new fine-pitch four-point probe, surface oxide layers of the probe material were characterized by a non-destructive depth profiling analysis with a variable excitation XPS using synchrotron radiation. The high surface sensitivity of this technique has allowed us to measure the ultra-thin thickness of the oxide layer on the probe material without damage. The XPS of W 4f of the tungsten metal was measured in the excitation x-ray energy range 100-1200 eV at the Photon Factory (BL-13C), Tsukuba, Japan and analysed by the simulation of attenuation in the layer models using the values of inelastic mean free path (IMFP) and effective attenuation length (EAL) calculated by the National Institute of Standards and Technology (NIST) database programs 71 and 82, respectively. The values of practical EAL at 1 run depth were smaller than the IMFP by 20-40% and resulted in a smaller thickness of the surface oxide layer than for that of IMFP by about 20%. The result showed that the thickness of the surface oxide layer of the tungsten metal was 1.0 nm 'as received' and 0.5 nm after polish. The XPS of W 4f of the superfine grain (grain size < 0.5 mum) tungsten carbide-cobalt wires with 0.45 mm diameter, which is a probe size of conventional four-point probes, were measured and the results indicated that the thickness of the surface oxide layer of the tungsten carbide-cobalt was 0.4 nm 'as received', and the thickness of the oxide layer was increased to 0.5 nm after polish. The XPS of W 4f of the tungsten carbide-cobalt wire with 0.05 mm diameter of an actual probe for a new fine-pitch four-point probe system was also measured and the results indicated that the thickness of the surface oxide layer was 0.6 nm. The XPS of W 4f also indicated the existence of an intermediate thin layer of WO2 between W and WO3. Copyright (C) 2004 John Wiley Sons, Ltd.
机译:在新的细间距四点探针的开发过程中,探针材料的表面氧化物层通过使用同步辐射的可变激发XPS进行无损深度轮廓分析来表征。这种技术的高表面灵敏度使我们能够测量探针材料上的氧化层的超薄厚度而不会造成损坏。在日本筑波的光子工厂(BL-13C)的激发x射线能量范围100-1200 eV中测量了钨金属W 4f的XPS,并使用这些值通过层模型的衰减模拟来分析美国国家标准技术研究院(NIST)数据库程序71和82分别计算出的非弹性平均自由程(IMFP)和有效衰减长度(EAL)。在1个运行深度处的实际EAL值比IMFP小20-40%,并且导致表面氧化物层的厚度比IMFP小约20%。结果表明,钨金属的表面氧化物层的厚度“原样”为1.0nm,抛光后为0.5nm。测量了直径为0.45 mm的超细晶粒(晶粒尺寸<0.5微米)的碳化钨-钴线材的W 4f XPS,它是常规四点探针的探针尺寸,结果表明表面的厚度碳化钨-钴的氧化物层“原样”为0.4nm,并且抛光后氧化物层的厚度增加至0.5nm。还测量了直径为0.05 mm的用于新的细间距四点探针系统的实际探针的碳化钨-钴线材W 4f的XPS,结果表明表面氧化物层的厚度为0.6 nm。 W 4f的XPS还表明W和WO3之间存在WO2中间薄层。版权所有(C)2004 John Wiley Sons,Ltd.

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