Chemical bonding of CNx films synthesized by nitrogen ion implantation into diamond and graphite

摘要

Carbon nitride films were synthesized by high-energy nitrogen ion implantation into diamond films and pyrolytic graphite at room temperature, and the chemical bonding states in implanted samples were investigated by Raman spectroscopy, infrared spectroscopy and X-ray photoelectron spectroscopy (XPS). The nitrogen and carbon in the samples were present in three different bonding states for all samples and the distribution of these states was affected by the substrate nature as well as the implantation energy. Comparison with the Raman spectra, the assignments of N 1s and C 1s bonding states in XPS for all samples were made, in which the peaks at similar to400.0 eV in N 1s spectra and similar to285.9 eV at C 1s spectra were attributed to sp(2) C-N bonding, whereas the peaks at similar to398.5 eV in N 1s spectra and similar to287.7 eV in C 1s spectra were ascribed to sp(3) C-N bonding. (C) 2003 Elsevier Science B.V. All rights reserved. [References: 25]