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Plasma immersion ion implantation of insulating materials

机译:等离子体浸没离子注入绝缘材料

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Plasma immersion ion implantation (PIII) was proposed in the mid-1980s and has mostly been applied to conducting materials or semiconductors. There is much interest in extending the technology to the treatment of insulating materials such as polymers, ceramics, rubber, etc. Implantation into these electrical insulating materials can enhance the properties and performance. In this paper, we describe our research work related to the plasma implantation of insulating materials. We have conducted numerical simulation using plasma fluid model and particle-in-cell (PIC) model as well as experimental investigations. During implantation of insulating materials, capacitance effects and surface charging reduce the energy of the incident ions. Severe charging occurs at the initial time stag e and the insulating sample on the metal target holder distorts the local plasma sheath leading to complicated implantation dynamics. In order to improve the implantation energy, a metal mesh is used to accelerate ions from the plasma and our results show that it is an effective technique for thick or large insulating objects. The metal mesh not only improves the implantation energy and the incident dose but also reduces the possibility of surface arcing. (c) 2004 Elsevier B.V. All rights reserved.
机译:等离子体浸没离子注入(PIII)于1980年代中期提出,主要应用于导电材料或半导体。将技术扩展到处理绝缘材料(例如聚合物,陶瓷,橡胶等)有很多兴趣。将这些材料植入这些电绝缘材料可以增强其性能和性能。在本文中,我们描述了与绝缘材料的等离子体注入有关的研究工作。我们已经使用等离子流体模型和细胞内颗粒(PIC)模型进行了数值模拟以及实验研究。在注入绝缘材料的过程中,电容效应和表面电荷会降低入射离子的能量。在初始时刻雄鹿发生严重的充电,金属靶架上的绝缘样品使局部等离子体鞘变形,从而导致复杂的注入动力学。为了提高注入能量,使用金属网来加速来自等离子体的离子,我们的结果表明,该技术是用于厚或大绝缘物体的有效技术。金属网不仅提高了注入能量和入射剂量,而且降低了表面电弧的可能性。 (c)2004 Elsevier B.V.保留所有权利。

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