A comparative study of electronic properties of the defects introduced in p-Si: (i) During electron beam deposition of Ti/Mo, (ii) by proton irradiation, and (iii) by electron irradiation

摘要

The electronic properties of defects introduced unintentionally, during electron beam deposition (EBD) of Ti and Mo on Cz grown, B-doped Si and those deliberately introduced by proton and electron irradiation are presented in this paper. Deep level transient spectroscopy (DLTS) studies on the samples revealed the following primary hole traps at 0.32 eV and 0.54 eV above the valence band after EBD processing. 0.15 eV, 0.32 eV after proton irradiation and 0.17 eV, 0.23 eV, 0.33 eV and 0.60 eV after electron irradiation. The comparison of the defect levels showed one common defect level at 0.32 eV above the valence band in the three radiation processed samples, and this hole trap is boron related. Most of the defect levels, created in these three samples, are not similar. Higher defect introduction rates were recorded for the proton when compared to the electron irradiation induced primary deep level states. We have also briefly discussed the annealing behaviour of these primary defect levels.