Er-doped dielectric films by radiofrequency magnetron co-sputtering

摘要

The radiofrequency magnetron sputtering co-deposition is potentially an excellent synthesis technique to obtain Er-doped dielectric films, materials characterized by the emission of an intense photoluminescence signal at lambda = 1.54 mu m (the most used wavelength in fiber glass for optical telecommunications). A comparison of the emission of Er3+ ions in different matrices such as silica and alumina is made. All of the deposited Er-doped films showed a photoluminescence yield strongly dependent on the condition of synthesis (in particular, on the way to furnish energy to the growing film) and on the post-synthesis annealing. In all cases, the photoluminescence yield of Er:Al2O3 films was larger than that of Er:SiO2 ones.