Influence of Ar gas flow rate in organosilicon plasma for the fabrication of SiO:CH thin films by PECVD method

摘要

SiO:CH films were prepared by capacitively coupled RF PECVD to investigate the dependence on Ar gas flow ratio based on plasma reactions and film properties. The introduced Ar gas flow rate increases an the amorphous carbon network, and dangling bonds or -OH terminations due to Ar ion bombardment. Moreover, Ar gas flow rate alters the dissociation reactions and leads to change the chemical bonding states and the water contact angle.