TFEL devices using oxide thin films without vacuum process

摘要

Thin-film electroluminescent (TFEL) device fabrication using solution coating techniques which eliminate the need for vacuum processes have been demonstrated. The oxide phosphor thin-film emitting layer and the transparent conducting oxidethin-film electrode were prepared by this less expensive deposition process using metallic complex salts which are low in cost and easy to handle. TFEL devices with dip-coated ZnGa{sub}2O{sub}4:Mn, Ga{sub}2O{sub}3:Mn and CaGa{sub}2O{sub}4:Mn phosphor thin films were compared to devices with sputtered phosphor thin films. TFEL devices with a dip-coated ZnGa{sub}2O{sub}4:Mn or Ga{sub}2 O{sub}3 Mn thin-film emitting layer exhibited higher luminance than equivalent devices with sputtered thin-film emittinglayers: a luminance maximum above 750 or 1000 cd/m {sup} 2 in green emission, respectively, when driven at 1 kHz.