...
首页> 外文期刊>Theoretical and Applied Genetics: International Journal of Breeding Research and Cell Genetics >Pi35(t), a new gene conferring partial resistance to leaf blast in the rice cultivar Hokkai 188.
【24h】

Pi35(t), a new gene conferring partial resistance to leaf blast in the rice cultivar Hokkai 188.

机译:Pi35(t)是赋予水稻新品种Hokkai 188部分抗叶瘟的新基因。

获取原文
获取原文并翻译 | 示例
           

摘要

The japonica rice cultivar Hokkai 188 shows a high level of partial resistance to leaf blast. For mapping genes conferring the resistance, a set of 190 F2 progeny/F3 families was developed from the cross between the indica rice cultivar Danghang-Shali, with a low level of partial resistance, and Hokkai 188. Partial resistance to leaf blast in the F3 families was assessed in upland nurseries. From a primary microsatellite (SSR) linkage map and QTL analysis using a subset of 126 F2 progeny/F3 families randomly selected from the above set, one major QTL located on chromosome 1 was detected in the vicinity of SSR marker RM1216. This QTL was responsible for 69.4% of the phenotypic variation, and Hokkai 188 contributed the resistance allele. Segregation analysis in the F3 families for partial resistance to leaf blast was in agreement with the existence of a major gene, and the gene was designated as Pi35(t). Another QTL detected on chromosome 8 was minor, explained 13.4% of the phenotypic variation, and an allele of Danghang-Shali increased the level of resistance in this QTL. Additional SSR markers of the targeted Pi35(t) region were further surveyed in the 190 F2 plants, and Pi35(t) was placed in a 3.5-cM interval flanked by markers RM1216 and RM1003..
机译:粳稻品种Hokkai 188对叶瘟表现出较高的部分抗性。为了定位具有抗性的基因,从部分抗性水平较低的D稻品种唐行沙里和Hokkai 188的杂交品种中开发了一套190个F2子代/ F3家族。F3对叶瘟的部分抗性在陆地托儿所对家庭进行了评估。通过使用从上述集合中随机选择的126个F2后代/ F3家族的子集进行的初级微卫星(SSR)连锁图和QTL分析,在SSR标记RM1216附近检测到一个位于1号染色体上的主要QTL。该QTL负责表型变异的69.4%,而Hokkai 188贡献了抗性等位基因。 F3族对叶瘟的部分抗性的分离分析与主要基因的存在相符,该基因被命名为Pi35(t)。在8号染色体上检测到的另一个QTL较小,解释了表型变异的13.4%,当杭沙里的等位基因增加了该QTL的抗性水平。在190 F2植物中进一步调查了目标Pi35(t)区域的其他SSR标记,并将Pi35(t)置于3.5-cM间隔,其两侧是标记RM1216和RM1003。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号