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The effect of size on the resistive switching characteristics of NiO nanodots

机译:尺寸对NiO纳米点电阻切换特性的影响

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NiO nanodots, were fabricated via a shattering process using an AFM tip, where an NiO nanodot with a diameter of approximately 90 nm was broken into very small pieces. The pieces showed diverse diameters, including three diameters of approximately 10, 20, and 30 nm. The NiO nanodots exhibited unipolar switching characteristics including bistable resistivity during 200 repeated switching cycles. Significantly, the magnitude of the "ON currents" was observed to depend on the formation of conducting filaments in the NiO nanodots. We suggest that the critical diameter of the RRAM NiO nanodots is approximately 30 nm. (C) 2016 Elsevier Ltd. All rights reserved.
机译:NiO纳米点是通过使用AFM尖端的粉碎工艺制造的,其中直径约为90 nm的NiO纳米点被破碎成非常小的碎片。这些碎片显示出不同的直径,包括大约10、20和30 nm的三个直径。 NiO纳米点在200个重复的开关循环中表现出单极性开关特性,包括双稳态电阻率。显着地,观察到“导通电流”的大小取决于NiO纳米点中导电丝的形成。我们建议RRAM NiO纳米点的临界直径约为30 nm。 (C)2016 Elsevier Ltd.保留所有权利。

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