Electronic propertiesofthemetal/organicinterlayer/inorganic semiconductorsandwichdevice

摘要

In thisstudy,weprepareda Metal(Al)/Organic Interlayer(CongoRed=CR)/Inorganic Semiconductor (p-Si)(MIS)Schottkydeviceformedbycoatingofanorganicfilmon p-Si semiconductorwafer.The Al/CR/p-Si MISdevicehadagoodrectifyingbehavior.Byusingtheforwardbias I–V characteristics,the values ofidealityfactor(n) andbarrierheight(Fb) fortheAl/CR/p-Si MISdevicewereobtainedas1.68 and 0.77eV,respectively.Itwasseenthatthe Fb value of0.77eVcalculatedfortheAl/CR/p-Si MIS devicewassignificantlyhigherthanvalueof0.50eVoftheconventionalAl/p-Si Schottkydiodes. ModificationoftheinterfacialpotentialbarrieroftheAl/p-Si diodewasachievedbyusingathin interlayeroftheCRorganicmaterial.ThiswasattributedtothefactthattheCRorganicinterlayer increasedtheeffectivebarrierheightbyinfluencingthespacechargeregionofSi.Theinterface-state densityoftheMISdiodewasfoundtovaryfrom1.241013 to 2.441012 eV1 cm2.