Dielectric function of germanium nanocrystals between 0.6 and 6.5 eV by spectroscopic ellipsometry

摘要

In this work. we report on the study of dielectric function of nanocrystalline germanium (nc-Ge) implanted in a host matrix SiO2 on a silicon substrate by spectroscopic ellipsometry (SE). The presence of nc-Ge is observed by transmission electron microscopy (TEM). The SE measurements are performed at 70 degrees of angle of incidence in air at room temperature.