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首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Anisotropic Thermochemical Hole Burning Phenomenon on TTF-TCNQ Single Crystal
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Anisotropic Thermochemical Hole Burning Phenomenon on TTF-TCNQ Single Crystal

机译:TTF-TCNQ单晶上的各向异性热化学烧孔现象

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A remarkable anisotropic thermochemical hole burning (THB) phenomenon was observed on TTF-TCNQ charge-transfer complex when using a STM tip to write information bits on its single-crystal surface. Such an anisotropy of hole formation was found to be closely related to the anisotropic thermal conducting property of TTF-TCNQ crystal, strongly supporting a nanometer scale thermochemical reaction mechanism. The high thermal conductivity of TTF-TCNQ leads to a very weak dependence of hole size on the pulse duration within a certain time scale, which was never observed with ammonium-TCNQ complexes. Comparative studies using isotropic thermal conducting TEA(TCNQ)2 complex and theoretical analyses were performed for elucidating the unique hole burning properties of TTF-TCNQ complex. The thermal gravimetry combined with mass spectrometry (TG-MS) of TTF-TCNQ was also done for a detailed understanding of the thermochemical decomposition reaction.
机译:当使用STM尖端在其单晶表面上写入信息位时,在TTF-TCNQ电荷转移复合体上观察到了显着的各向异性热化学空穴燃烧(THB)现象。发现这种空穴形成的各向异性与TTF-TCNQ晶体的各向异性导热性能密切相关,强烈支持纳米级热化学反应机理。 TTF-TCNQ的高热导率导致孔尺寸在一定时间范围内对脉冲持续时间的依赖性非常弱,这在铵-TCNQ络合物中从未观察到。使用各向同性的导热TEA(TCNQ)2配合物进行了比较研究,并进行了理论分析,以阐明TTF-TCNQ配合物的独特烧孔性能。还对TTF-TCNQ进行了热重分析与质谱分析(TG-MS)的结合,以详细了解热化学分解反应。

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