首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Thermal Decomposition of a Chemical Warfare Agent Simulant (DMMP) on TiO2: Adsorbate Reactions with Lattice Oxygen as Studied by Infrared Spectroscopy
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Thermal Decomposition of a Chemical Warfare Agent Simulant (DMMP) on TiO2: Adsorbate Reactions with Lattice Oxygen as Studied by Infrared Spectroscopy

机译:TiO2上化学战剂模拟物(DMMP)的热分解:红外光谱研究与晶格氧的吸附反应

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摘要

The thermal decomposition of dimethyl methylphosphonate (DMMP), a chemical warfare agent simulant, on high surface area TiO2 nanoparticles (Degussa P25) has been studied by transmission infrared spectroscopy. The dominant reaction channel in the low-temperature regime from 295 to 400 K is the nucleophilic attack of adsorbed DMMP by neighboring oxygen to produce Ti-OCH3 and a variety of P-O_x surface bound groups. Arrhenius studies reveal an activation energy of ~48 kJ mol~(-1) for the conversion of surface bound phosphoryl (P=O) groups into P-O_x species. Above 400 K, thermally activated lattice oxygen begins to play a dominant role in driving the oxidation of surface Ti-OCH3 groups. The electrons left behind following the extraction of lattice oxygen are observed by a broad rise in the infrared absorbance as the electrons are excited from shallow traps into the conduction band. Tracking lattice oxygen removal as a function of temperature reveals an activation energy of ~33 kJ mol~(-1), over the temperature range ~400-600 K, for the high-temperature oxidation of strongly bound surface adsorbates. These measurements can be employed to provide a more complete understanding of the key role that lattice oxygen plays in the degradation of adsorbates on the surface of active nanoparticulate semiconductor oxides.
机译:通过透射红外光谱研究了化学战剂模拟物甲基膦酸二甲酯(DMMP)在高表面积TiO2纳米颗粒(Degussa P25)上的热分解。在295至400 K的低温条件下,主要的反应通道是吸附的DMMP受到相邻氧的亲核攻击,从而生成Ti-OCH3和各种P-O_x表面键合基团。阿雷尼乌斯的研究表明,约48 kJ mol〜(-1)的活化能可将表面结合的磷酰基(P = O)基团转化为P-O_x物种。高于400 K,热活化的晶格氧开始在驱动表面Ti-OCH3基团的氧化中起主要作用。随着电子从浅陷阱中被激发进入导带,红外吸收率的大幅上升可观察到晶格氧提取后留下的电子。跟踪随温度变化的晶格除氧量可发现在约400-600 K的温度范围内,对于牢固结合的表面吸附物的高温氧化,其活化能为〜33 kJ mol〜(-1)。这些测量可以用来提供对晶格氧在活性纳米微粒半导体氧化物表面吸附物降解中所起关键作用的更完整的理解。

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