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首页> 外文期刊>Chemistry of Materials: A Publication of the American Chemistry Society >Nickel Sulfide Thin Films from Thio- and Dithiobiuret Precursors
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Nickel Sulfide Thin Films from Thio- and Dithiobiuret Precursors

机译:硫代和二硫代双缩脲前体的硫化镍薄膜

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The nickel(II) complexes of several 1,1,5,5-tetraalkyl-2-thiobiurets (R = methyl (1); methyl, ethyl (2); ethyl (3); isopropyl (4)) and 1,1,5,5-tetraalkyl-2,4-dithiobiurets (R = methyl (5); methyl, ethyl (6); ethyl (7)) have been synthesized. The single crystal X-ray structures of complexes (1), (3), (4), (6), and (7) have been determined. Thermogravimetric analysis shows all seven complexes decompose in a single step to one or another form of nickel sulfide. The complexes were used as single-source precursors for the deposition of nickel sulfide thin films by aerosol assisted chemical vapor deposition (AACVD) at temperatures between 320 and 480 °C. Complex (1) gave orthorhombic Ni7S6 at all temperatures with spherical tipped wirelike crystallites and plates. Complex (2) gave mixtures of hexagonal Ni_(17)S_(18) and orthorhombic Ni7S6 with wires and plates. Complex (3) also led to a mixture of hexagonal Ni_(17)S_(18) and orthorhombic Ni7S6 phases but with platelike crystallites. In contrast complex (4) gave orthorhombic Ni9S8 with flowerlike structures at 320 and 360 °C and branched structures at 400 °C. Complex (6) gave hexagonal NiS_(1.03) at 360 and 400 °C, and orthorhombic Ni7S6 at 440 and 480 °C with wires and rods composed of spherical particles. Complex (7) gave rods composed of hexagonal plates with hexagonal NiS_(1.03) phase at 360 and 400 °C and orthorhombic Ni7S6 at 440 and 480 °C. The composition of films deposited from all these complexes was confirmed by EDX analysis. The influence of the precursors on the nature of the deposited films is discussed.
机译:几种1,1,5,5-四烷基-2-硫代缩二脲的镍(II)配合物(R =甲基(1);甲基,乙基(2);乙基(3);异丙基(4))和1,1已合成了1,5,5-四烷基-2,4-二硫代缩二脲(R =甲基(5);甲基,乙基(6);乙基(7))。已经确定了配合物(1),(3),(4),(6)和(7)的单晶X射线结构。热重分析表明,所有七个配合物都在一个步骤中分解为一种或另一种形式的硫化镍。该络合物用作单源前驱体,用于在320至480°C的温度下通过气溶胶辅助化学气相沉积(AACVD)沉积硫化镍薄膜。配合物(1)在所有温度下均具有球状线状微晶和板状的正交晶Ni7S6。配合物(2)通过线和板给出了六方Ni_(17)S_(18)和斜方Ni7S6的混合物。配合物(3)也导致了六方Ni_(17)S_(18)和正交Ni7S6相的混合物,但具有板状微晶。相反,复合物(4)给出了斜方晶的Ni9S8,在320和360°C下具有花状结构,在400°C下具有分支结构。配合物(6)在360和400°C下产生六边形NiS_(1.03),在440和480°C下产生正交晶Ni7S6,并带有由球形颗粒组成的线和棒。配合物(7)给出了由六方板组成的棒,六方板在360和400°C下具有六方NiS_(1.03)相,在440和480°C下具有正交晶Ni7S6。由所有这些络合物沉积的膜的组成通过EDX分析确认。讨论了前体对沉积膜性质的影响。

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