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首页> 外文期刊>Chemistry of Materials: A Publication of the American Chemistry Society >In Situ Reaction Mechanism Studies on Atomic Layer Deposition of ZrO2 from (CpMe)2Zr(OMe)Me and Water or Ozone
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In Situ Reaction Mechanism Studies on Atomic Layer Deposition of ZrO2 from (CpMe)2Zr(OMe)Me and Water or Ozone

机译:(CpMe)2Zr(OMe)Me与水或臭氧中ZrO2原子层沉积的原位反应机理研究

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Reaction mechanisms in the atomic layer deposition of ZrO2 from (CpMe)2Zr(OMe)Me and deuterated water or ozone were studied in situ with a quadrupole mass spectrometer and a quartz crystal microbalance at 350 °C. In the D2O process the detected reaction byproducts were as expected MeD, MeOD, and DCpMe. About 80% of the MeD, 40% of the MeOD, and 60% of the DCpMe were formed during the (CpMe)2Zr(OMe)Me pulse in reactions with surface —OD groups and the rest during the D2O pulse. In the ozone process the most important reaction byproducts were CO2 and H2O. Interestingly, about 20% of both of these were released already during the (CpMe)2Zr(OMe)Me pulse and the rest during the O3 pulse. In addition, some MeH and HCpMe were formed during the (CpMe)2Zr(OMe)Me pulse. Furthermore, D2O was used to probe the state of the surface after the (CpMe)2Zr(OMe)Me pulse in the O3 process. Thereby, it could be stated that about 50% of the Me— ligands, 40% of the MeO— ligands, and 60% of the -CpMe ligands were eliminated during the (CpMe)2Zr(OMe)Me pulse. Similarly, ZrCl4 was used to probe the surface after the O3 pulse. Thereby, the surface was found to be covered with only about 10% —OH concentration as compared to the water process. To explain the observations, some active oxygen was concluded to be left on the surface after the O3 pulse.
机译:用四极质谱仪和石英晶体微量天平在350°C下原位研究了(CpMe)2Zr(OMe)Me与氘化水或臭氧中ZrO2原子层沉积的反应机理。在D2O过程中,检测到的反应副产物为预期的MeD,MeOD和DCpMe。在(CpMe)2Zr(OMe)Me脉冲过程中,与表面OD组反应时形成了约80%的MeD,40%的MeOD和60%的DCpMe,其余的在D2O脉冲中形成。在臭氧过程中,最重要的反应副产物是CO2和H2O。有趣的是,在(CpMe)2Zr(OMe)Me脉冲期间,这两种气体中的约20%已经释放,而在O3脉冲期间,其余气体已经释放。此外,在(CpMe)2Zr(OMe)Me脉冲期间形成了一些MeH和HCpMe。此外,在O3工艺中使用(CpMe)2Zr(OMe)Me脉冲后,使用D2O探测表面状态。因此,可以说在(CpMe)2Zr(OMe)Me脉冲期间消除了大约50%的Me-配体,40%的MeO-配体和60%的-CpMe配体。同样,在O3脉冲后,使用ZrCl4探测表面。由此,发现与水处理相比,表面仅被约10%的-OH浓度覆盖。为了解释这些观察结果,推断出在O3脉冲之后表面上会残留一些活性氧。

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