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首页> 外文期刊>Chemistry of Materials: A Publication of the American Chemistry Society >Structure-Function Relationships of High-Electron Mobility Naphthalene Diimide Copolymers Prepared Via Direct Arylation
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Structure-Function Relationships of High-Electron Mobility Naphthalene Diimide Copolymers Prepared Via Direct Arylation

机译:通过直接丙烯酸化制备高电子迁移率的萘二酰亚胺共聚物的结构-功能关系

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Direct arylation (DA) is emerging as a highly promising method to construct inexpensive conjugated materials for large-area electronics from simple and environmentally benign building blocks. Here, we show that exclusive α-C-H selectivity is feasible in the DA of π-extended monomers having unsubstituted thiophene or furan units, leading to fully linear materials. Two new naphthalene diimide-based conjugated copolymers-P(FuNDIFuF4) and P(ThNDIThF4), composed of naphthalene diimide (NDI), furan (Fu) or thiophene (Th), and tetrafluorobenzene (F4)-are synthesized. Insight into structure-function relationships is given by density functional theory (DFT) calculations and variety of experimental techniques, whereby the effect of the heteroatom on the optical, structural, and electronic properties is investigated. The use of furan (Fu) allows for enhanced solubilities, a smaller dihedral angle between NDI and Fu as a result of the smaller size of Fu, and a smaller π-π-stacking distance in the solid state. P(FuNDIFuF4) also exhibits a more edge-on orientation compared to P(ThNDIThF4). Despite these advantageous properties of P(FuNDIFuF4), P(ThNDIThF4) exhibits the highest electron mobility: ~1.3 cm~2/(V s), which is a factor of ~3 greater than that of P(FuNDIFuF4). The enhanced OFET performance of P(ThNDIThF4) is explained by reduced orientational disorder and the formation of a terrace-like thin-film morphology.
机译:直接芳基化(DA)正在成为一种非常有前途的方法,该方法可以从简单且对环境无害的构造块中构建用于大面积电子产品的廉价共轭材料。在此,我们表明,在具有未取代的噻吩或呋喃单元的π扩展单体的DA中,排他的α-C-H选择性是可行的,从而导致形成完全线性的材料。合成了两种新的基于萘二酰亚胺的共轭共聚物-P(FuNDIFuF4)和P(ThNDIThF4),它们分别由萘二酰亚胺(NDI),呋喃(Fu)或噻吩(Th)和四氟苯(F4)组成。通过密度泛函理论(DFT)计算和各种实验技术可以洞悉结构与功能之间的关系,从而研究杂原子对光学,结构和电子性质的影响。呋喃(Fu)的使用可提高溶解度,由于Fu的尺寸较小,NDI和Fu之间的二面角较小,固态时π-π堆积距离较小。与P(ThNDIThF4)相比,P(FuNDIFuF4)还显示出更多的边沿定向。尽管P(FuNDIFuF4)具有这些有利的特性,但P(ThNDIThF4)仍显示出最高的电子迁移率:〜1.3 cm〜2 /(V s),比P(FuNDIFuF4)高约3倍。 P(ThNDIThF4)的OFET性能增强是通过减少取向紊乱和形成梯状薄膜形态来解释的。

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