首页> 外文期刊>Chemistry of Materials: A Publication of the American Chemistry Society >Tuning and Enhancing White Light Emission of II—VI Based Inorganic-Organic Hybrid Semiconductors as Single-Phased Phosphors
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Tuning and Enhancing White Light Emission of II—VI Based Inorganic-Organic Hybrid Semiconductors as Single-Phased Phosphors

机译:调谐和增强基于II-VI的无机-有机混合半导体作为单相荧光粉的白光发射

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Single-phased white light emitters made of semiconductor bulk materials are most desirable for use in white light-emitting diodes (WLEDs) based on both photoluminescence and electroluminescence. Here we demonstrate Cd and/or Se substituted double-layer [Zn2S2(ha)] (ha = n-hexylamine) hybrid semiconductors emit bright white light in the bulk form and their emission properties are systematically tunable. The ternary Zn_(2-2x)Cd_(2x)S2(ha) hybrid compounds exhibit two photoluminescence (PL) emission peaks, one of which being attributed to band gap emission, and the other resulting from Cd doping and surface sites. The Cd concentration modulates the optical absorption edge (band gap) and the positions of the two emission bands along with their relative intensities. The ZnS-based hybrid structures (with a.nominal Cd mole fraction x = 0.25) emit bright white light with significantly enhanced photoluminescence quantum yield (PLQY) compared to its CdS-based hybrid analogues. For the quaternary Zn_(2-2x)Cd_(2x)S_(2-2y)Se_(2y)(ha) compounds (x = 0.25 and different nominal Se mole fractions y) the synergetic effect between doped Cd and Se atoms leads to further tunability in the band gap and emission spectra, yielding well balanced white light of high quantum yield. Detailed analysis reveals that the PL emission properties of the ternary and quaternary hybrid semiconductors originate from their unique double-layered nanostructures that combine the strong quantum confinement effect and large number of surface sites. The white-light emitting hybrid semiconductors represent a new type of single-phased phpsphors with great promise for use in WLEDs.
机译:由半导体本体材料制成的单相白光发射器最需要用于基于光致发光和电致发光的白光发光二极管(WLED)。在这里,我们证明了Cd和/或Se取代的双层[Zn2S2(ha)](ha = n-己基胺)杂化半导体以块状发出明亮的白光,并且它们的发射特性可以系统地调整。三元Zn_(2-2x)Cd_(2x)S2(ha)杂化化合物显示两个光致发光(PL)发射峰,其中一个归因于带隙发射,另一个归因于Cd掺杂和表面位点。 Cd浓度可调节光吸收边缘(带隙)和两个发射带的位置及其相对强度。与基于CdS的杂化类似物相比,基于ZnS的杂化结构(标称Cd摩尔分数x = 0.25)发出明亮的白光,光致发光的量子产率(PLQY)大大提高。对于四元Zn_(2-2x)Cd_(2x)S_(2-2y)Se_(2y)(ha)化合物(x = 0.25和不同的标称硒摩尔分数y),掺杂Cd和Se原子之间的协同效应导致带隙和发射光谱具有进一步的可调谐性,可产生高量子产率的平衡良好的白光。详细分析表明,三元和四元杂化半导体的PL发射特性源自其独特的双层纳米结构,该结构结合了强大的量子约束效应和大量表面位点。发射白光的混合半导体代表了一种新型的单相phpsphors,有望在WLED中使用。

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