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首页> 外文期刊>The Journal of Chemical Physics >AB INITIO CALCULATIONS ON THE ELECTRONIC STATES OF GAAR AND GAAR+
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AB INITIO CALCULATIONS ON THE ELECTRONIC STATES OF GAAR AND GAAR+

机译:GAAR和GAAR +电子态的从头算

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The 1-2 (2) Pi(1/2), 1-2 (2) Pi(3/2), and 1-3 (2) Sigma(1/2)(+) states of GaAr and the 1 (1) Sigma(+) and 1 (3) Sigma(-) states of GaAr+ are calculated by ab initio methods. Spectroscopic properties for these states are compared with experimental data, and the existence of potential barrier for the Rydberg (2) Sigma(1/2) states is explained. We have also proved the nonbonding character of the 1 (2) Pi(1/2)(X) State of GaAr. The bond energy of the doubly excited 1 (3) Sigma(-) state, 12 557 cm-l, is much larger than that of the ground state (X (1) Sigma(-)) of GaAr+, 584 cm(-1), which in turn is more strongly bound than the neutral species (70 cm(-1) for the ground state, 340 cm(-1) for the 2 (2) Pi(3/2) state). The nonbonding character of the X (2) Pi(1/2) State of GaAr can be attributed to the spin-orbit interaction. Transition properties between these states are also calculated. (C) 1997 American Institute of Physics. [References: 27]
机译:GaAr和1-2(2)Pi(1/2),1-2(2)Pi(3/2)和1-3(2)Sigma(1/2)(+)状态1)通过从头算方法计算GaAr +的Sigma(+)和1(3)Sigma(-)状态。这些状态的光谱性质与实验数据进行了比较,并解释了Rydberg(2)Sigma(1/2)状态的势垒的存在。我们还证明了GaAr的1(2)Pi(1/2)(X)状态的非键性。双激发1(3)Sigma(-)状态(12 557 cm-1)的键能比GaAr +的基态(X(1)Sigma(-))584 cm(-1)大得多),而后者比中性物质(基态为70 cm(-1),2(2)Pi(3/2)状态为340 cm(-1))的结合力更强。 GaAr的X(2)Pi(1/2)状态的非键性可以归因于自旋轨道相互作用。还计算这些状态之间的过渡特性。 (C)1997美国物理研究所。 [参考:27]

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