...
首页> 外文期刊>Chemistry of Materials: A Publication of the American Chemistry Society >Perfluoroalkyl-Functionalized Thiazole Thiophene Oligomers as N-Channel Semiconductors in Organic Field-Effect and Light-Emitting Transistors
【24h】

Perfluoroalkyl-Functionalized Thiazole Thiophene Oligomers as N-Channel Semiconductors in Organic Field-Effect and Light-Emitting Transistors

机译:全氟烷基官能化的噻唑噻吩低聚物作为有机场效应和发光晶体管中的N通道半导体

获取原文
获取原文并翻译 | 示例
           

摘要

Despite their favorable electronic and structural properties, the synthetic development and incorporation of thiazole-based building blocks into n-type semiconductors has lagged behind that of other pi-deficient building blocks. Since thiazole insertion into pi-conjugated systems is synthetically more demanding, continuous research efforts are essential to underscore their properties in electron-transporting devices. Here, we report the design, synthesis, and characterization of a new series of thiazolethiophene tetra- (1 and 2) and hexa-heteroaryl (3 and 4) co-oligomers, varied by core extension and regiochemistry, which are end-functionalized with electron-withdrawing perfluorohexyl substituents. These new semiconductors are found to exhibit excellent n-channel OFET transport with electron mobilities (mu(e)) as high as 1.30 cm(2)/(V center dot s) (I-on/I-off > 10(6)) for films of 2 deposited at room temperature. In contrary to previous studies, we show here that 2,2'-bithiazole can be a very practical building block for high-performance n-channel semiconductors. Additionally, upon 2,2'- and 5,5'-bithiazole insertion into a sexithiophene backbone of well-known DFH-6T, significant charge transport improvements (from 0.0010.021 cm(2)/(V center dot s) to 0.200.70 cm(2)/(V center dot s)) were observed for 3 and 4. Analysis of the thin-film morphological and microstructural characteristics, in combination with the physicochemical properties, explains the observed high mobilities for the present semiconductors. Finally, we demonstrate for the first time implementation of a thiazole semiconductor (2) into a trilayer light-emitting transistor (OLET) enabling green light emission. Our results show that thiazole is a promising building block for efficient electron transport in ?-conjugated semiconductor thin-films, and it should be studied more in future optoelectronic applications.
机译:尽管它们具有良好的电子和结构特性,但噻唑基构建基块的合成开发和将其并入n型半导体中已落后于其他pi缺陷构建基块。由于噻唑在pi共轭体系中的插入对合成的要求更高,因此不断的研究工作对于强调其在电子传输设备中的性能至关重要。在这里,我们报道了一系列新的噻唑噻吩四(1和2)和六杂芳基(3和4)共聚体的设计,合成和表征,它们随核心延伸和区域化学的变化而变化,并最终被吸电子的全氟己基取代基。发现这些新半导体具有出色的n沟道OFET传输能力,电子迁移率(mu(e))高达1.30 cm(2)/(V中心点s)(I-on / I-off> 10(6) )适用于在室温下沉积的2膜。与以前的研究相反,我们在这里表明2,2'-联噻唑可以成为高性能n通道半导体的非常实用的构建基块。此外,在将2,2'-和5,5'-噻唑插入著名的DFH-6T的六噻吩骨架中后,电荷传输显着改善(从0.0010.021 cm(2)/(V中心点s)改善至0.200对于3和4,观察到0.70 cm(2)/(V中心点s))。对薄膜形态和微结构特征的分析以及理化性质的结合说明了本半导体的高迁移率。最后,我们首次展示了噻唑半导体(2)在三层发光晶体管(OLET)中的实现,从而实现了绿色发光。我们的结果表明,噻唑是π共轭半导体薄膜中有效电子传输的有前途的基石,应在未来的光电应用中进行更多研究。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号