Synthesis and Characterization of Semiconducting Boron-doped Amorphous Carbon Materials Using an Organic Boron Compound as a Precursor

摘要

Boron-doped amorphous carbon was synthesized by poly-merizing naphthalene and triphenylborane with subsequent heat treatment by spark plasma sintering. The boron-doped carbon material has negative Seebeck coefficient (—0.22 mV K~(-1)), which indicates the carbon material functions as an n-type semiconductor.