首页> 外文期刊>The European physical journal, B. Condensed matter physics >Electronic properties close to Dirac cone in two-dimensional organic conductor -(BEDT-TTF)2I3
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Electronic properties close to Dirac cone in two-dimensional organic conductor -(BEDT-TTF)2I3

机译:二维有机导体-(BEDT-TTF)2I3中接近狄拉克锥的电子性质

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摘要

A zero-gap state (ZGS) has been found in a bulk system of two-dimensional organic conductor, -(BEDT-TTF)2I3 salt which consists of four sites of donor molecules in a unit cell. In the present paper, the characteristic of the ZGS is analyzed in detail and the electronic properties are examined in the vicinity of the Dirac point where the conduction and valence bands degenerate to form the zero-gap. The eigenvectors of the energy band have four components of respective sites, where two of them correspond to inequivalent sites and the other two correspond to equivalent sites. It is shown that the former exhibits an exotic momentum dependence around the contact point and the latter shows almost a constant dependence. The density of states of each site close to the Dirac point is calculated to demonstrate the temperature dependence of the local magnetic susceptibility and the local nuclear magnetic relaxation rate. Further, the robust property of the ZGS against the anion potential is also shown by using the second-order perturbation.
机译:在二维有机导体-(BEDT-TTF)2I3盐的整体系统中发现了零间隙状态(ZGS),该盐由晶胞中的四个供体分子位点组成。在本文中,详细分析了ZGS的特性,并在Dirac点附近检测了电子性质,在Dirac点附近,导带和价带退化形成零间隙。能带的特征向量具有相应位点的四个分量,其中两个对应于不等价位点,另外两个对应于等效位点。结果表明,前者在接触点周围表现出奇特的动量依赖性,而后者则表现出几乎恒定的依赖性。计算接近狄拉克点的每个位点的状态密度,以证明局部磁化率和局部核磁弛豫率的温度依赖性。此外,还通过使用二阶扰动来显示ZGS对阴离子电势的鲁棒性。

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