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Mechanisms of amorphization-induced swelling in silicon carbide: the molecular dynamics answer

机译:碳化硅中非晶化诱导溶胀的机制:分子动力学答案

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We present here the continuation of an investigation of the irradiation-induced swelling of SiC using classical molecular dynamics (CMD) simulations. Heavy ion irradiation has been assumed to affect the material in two successive steps (a) creation of local atomic disorder, modeled by the introduction of extended amorphous areas with various sizes and shapes in a crystalline SiC sample at constant volume (b) induced swelling, determined through relaxation using Molecular Dynamics at constant pressure. This swelling has been computed as a function of the amorphous fraction introduced. Two different definitions of the amorphous fraction were introduced to enable meaningful comparisons of our calculations with experiments and elastic modeling. One definition based on the displacements relative to the ideal lattice positions was used to compare the CMD results with data from experiments combining ion implantations and channeled Rutherford Backscattering analyses. A second definition based on atomic coordination was used to compare the CMD results to those yielded by a simplified elastic model. The results obtained are as follows. On the one hand, comparison of the swelling obtained as a function of the lattice amorphous fraction with the experimental results shows that the melting-quench amorphization simulates the best the irradiation-induced amorphization observed experimentally. This is consistent with the thermal spike phenomenon taking place during ion implantation. On the other hand, disorder analysis at the atomic scale confirms the elastic behavior of the amorphization-induced swelling, in agreement with the comparison with the results of an elastic model. First, no major structural reconstruction occurs during relaxation or annealing. Second, the systems with the most disordered and constrained amorphous area undergo the largest swelling. This means that the disorder and the constraints of the bulk amorphous area are the driving forces for the swelling observed. On the contrary, the nature of the interface does not affect significantly the swelling observed.
机译:我们在此展示了使用经典分子动力学(CMD)模拟对SiC的辐照诱导溶胀进行的研究的继续。假设重离子辐照会在两个连续的步骤中影响材料(a)产生局部原子无序,其模型是在恒定体积下向晶体SiC样品中引入具有各种尺寸和形状的扩展无定形区域(b)引起溶胀,在恒定压力下使用分子动力学通过松弛确定。已经根据引入的无定形部分计算了该溶胀。引入了两种不同的无定形部分定义,以使我们的计算与实验和弹性模型进行有意义的比较。一种基于相对于理想晶格位置的位移的定义用于将CMD结果与结合离子注入和通道Rutherford背向散射分析的实验数据进行比较。使用基于原子配位的第二种定义将CMD结果与简化弹性模型得出的结果进行比较。得到的结果如下。一方面,将所得到的作为晶格非晶态分数的函数的溶胀与实验结果进行比较表明,熔解-淬火非晶化模拟最佳地观察到了辐射诱导的非晶化。这与离子注入过程中发生的热尖峰现象一致。另一方面,与弹性模型的结果相比较,在原子尺度上的无序分析证实了非晶化引起的膨胀的弹性行为。首先,在松弛或退火过程中不会发生重大的结构重建。其次,具有最无序和受约束的非晶区域的系统膨胀最大。这意味着无定形区域的无序和约束是观察到的膨胀的驱动力。相反,界面的性质不会显着影响观察到的溶胀。

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