首页> 外文期刊>The European physical journal, B. Condensed matter physics >Positively and negatively charged magneto excitons in GaAs/Ga1-x Al x As double quantum wells
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Positively and negatively charged magneto excitons in GaAs/Ga1-x Al x As double quantum wells

机译:GaAs / Ga1-x Al x As双量子阱中带正负电荷的磁激子

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摘要

Binding energies of positively and negatively charged magneto excitons are investigated by using the variational procedure within the single band effective mass approximation. A linear Rashba spin-orbit coupling module with the position dependent electron is included in our calculations in order to study the change in spin-orbit splitting energy. In continuation, the interband optical transition, with and without the exciton, is computed as a function of well width. The valence-band anisotropy is included in our theoretical model by using different hole masses in different spatial directions. It is observed that (i) negative trions are found to have a higher binding energy than positive trions, (ii) the exciton binding energy and the interband emission energy both increase when the well width is decreased and (iii) the effect of exciton has influence on the interband emission energy. The results of the present investigation are found to be in good agreement with the recently published results.
机译:通过在单带有效质量近似内使用变分程序研究带正电和带负电的磁激子的结合能。为了研究自旋轨道分裂能的变化,我们的计算中包括一个线性的Rashba自旋轨道耦合模块,其位置依赖于电子。继续地,计算具有和不具有激子的带间光跃迁作为阱宽度的函数。通过在不同空间方向上使用不同的空穴质量,将价带各向异性包括在我们的理论模型中。观察到:(i)发现负重子具有比正重子更高的结合能,(ii)阱宽度减小时,激子结合能和带间发射能都增加,并且(iii)激子效应具有对带间发射能量的影响。发现本调查的结果与最近发表的结果非常吻合。

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