Ballistic transport in bilayer nano-graphite ribbons under gate and magnetic fields

摘要

This study uses the tight-binding model to examine the ballistic transport of short and infinitely long bilayer nano-graphite ribbons for different stacked structures, AA and AB, under perpendicularly applied gate and magnetic fields. In the small bias region, the conduction of the AB-stacked ribbon is better than for the AA. Under a gate field with small bias, the AB-stacked ribbon exhibits a significant current peak at the zero gate field point, similar to the graphene ribbon. On the contrary, this current peak is not found in the AA-stacked case. Under a perpendicular magnetic field with small bias, the magnetoresistance ratio in both stacked graphene ribbons are proportional to the square of the magnetic field.