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Hydrogenic impurity ground state in quantum well: the envelope function revisited

机译:量子阱中的氢杂质基态:包络函数的再研究

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摘要

We present a new variationnal method for calculating the ground state energy of an electron bound to an impurity located in a quantum well. This method relies on an envelope function which is determined exactly from a formal minimization procedure. The obtained energies are lower by as much as 10% than the ones found by the widely used free electron envelope function. Their large width limits are reached with exponentially small corrections as they should. We also find that, except for narrow wells, the shape of these exact envelope functions strongly depends on the impurity position, being consequently quite different from the usual free electron ones. In order to discuss the improvements brought by our new procedure in the most striking way, we have used a model semiconductor quantum well with infinite barrier height and simplified band structure. Extensions can be made to finite barrier and more realistic band structures, following the same technique.
机译:我们提出了一种新的变分法,用于计算结合到位于量子阱中的杂质的电子的基态能量。该方法依赖于包络函数,该包络函数是从正式的最小化过程中精确确定的。所获得的能量比被广泛使用的自由电子包络函数所发现的能量低多达10%。通过应按指数方式进行较小的校正即可达到其较大的宽度限制。我们还发现,除了窄阱以外,这些确切的包络函数的形状在很大程度上取决于杂质的位置,因此与常规的自由电子完全不同。为了以最惊人的方式讨论我们的新程序带来的改进,我们使用了具有无限势垒高度和简化带结构的模型半导体量子阱。遵循相同的技术,可以扩展到有限势垒和更逼真的能带结构。

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