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Electron-doping versus hole-doping in the 2D t-t' Hubbard model

机译:二维t-t'Hubbard模型中的电子掺杂与空穴掺杂

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摘要

We compare the one-loop renormalization group flow to strong coupling of the electronic interactions in the two-dimensional t-t'-Hubbard model with t' = -0.3t for band fillings smaller and larger than half-filling. Using a numerical N-patch scheme (N = 32, …, 96) we show that in the electron-doped case with decreasing electron density there is a rapid transition from a d_(x~2-y~2)-wave superconducting regime with small characteristic energy scale to an approximate nesting regime with strong antiferromagnetic tendencies and higher energy scales. This contrasts with the hole-doped side discussed recently which exhibits a broad parameter region where the renormalization group flow suggests a truncation of the Fermi surface at the saddle points. We compare the quasiparticle scattering rates obtained from the renormalization group calculation which further emphasize the differences between the two cases.
机译:我们将一圈重新归一化组流与二维t-t'-Hubbard模型中电子相互作用的强耦合进行比较,其中t'= -0.3t(小于和大于半填充)。使用数值N斑方案(N = 32,…,96),我们表明,在电子掺杂的情况下,随着电子密度的降低,从d_(x〜2-y〜2)波超导态有一个快速过渡具有较小的特征能级,到具有强反铁磁趋势和较高能级的近似嵌套状态。这与最近讨论的掺杂空穴的一侧形成对比,后者显示了一个较宽的参数区域,在该区域中,重新归一化的基团流动表明费米表面在鞍点处被截断。我们比较了从重归一化组计算获得的准粒子散射率,这进一步强调了两种情况之间的差异。

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