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Electron energy state spin-splitting in 3D cylindrical semiconductor quantum dots

机译:3D圆柱半导体量子点中的电子能态自旋分裂

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In this article we study the impact of the spin-orbit interaction on the electron quantum confinement for narrow gap semiconductor quantum dots. The model formulation includes: (1) the effective one-band Hamiltonian approximation; (2) the position- and energy-dependent quasi-particle effective mass approximation; (3) the finite hard wall confinement potential; and (4) the spin-dependent Ben Daniel-Duke boundary conditions. The Hartree-Fock approximation is also utilized for evaluating the characteristics of a two-electron quantum dot system. In our calculation, we describe the spin-orbit interaction which comes from both the spin-dependent boundary conditions and the Rashba term (for two-electron quantum dot system). It can significantly modify the electron energy spectrum for InAs semiconductor quantum dots built in the GaAs matrix. The energy state spin-splitting is strongly dependent on the dot size and reaches an experimentally measurable magnitude for relatively small dots. In addition, we have found the Coulomb interaction and the spin-splitting are suppressed in quantum dots with small height.
机译:在本文中,我们研究了自旋轨道相互作用对窄间隙半导体量子点的电子量子约束的影响。该模型的公式包括:(1)有效的单频带哈密顿近似; (2)与位置和能量有关的准粒子有效质量近似; (3)有限的硬壁约束潜力; (4)自旋相关的Ben Daniel-Duke边界条件。 Hartree-Fock近似还用于评估两电子量子点系统的特性。在我们的计算中,我们描述了自旋轨道相互作用,该相互作用既来自于与自旋有关的边界条件,又来自于Rashba项(对于两个电子量子点系统)。它可以显着修改GaAs矩阵中内置的InAs半导体量子点的电子能谱。能量状态自旋分裂在很大程度上取决于点的大小,对于相对较小的点,其达到实验可测量的大小。另外,我们发现在高度小的量子点中库仑相互作用和自旋分裂被抑制。

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