首页> 外文期刊>The European physical journal, B. Condensed matter physics >Frontier induced semi-infinite-medium (FISIM) states at semiconductor surfaces and interfaces
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Frontier induced semi-infinite-medium (FISIM) states at semiconductor surfaces and interfaces

机译:半导体表面和界面的边界感应半无限介质(FISIM)状态

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In a previous work we have discussed the valence band electronic structure of a (001) oriented surface (semi-infinite medium) of some II-VI wide band gap zinc-blende semiconductor compounds. For these systems, we have found three characteristic surface resonances, besides the known bulk bands (hh, lh and spin-orbit bands). Two of these resonances correspond to the anion terminated surfaced and the third one to the cation terminated one. We have shown, specifically, that three non dispersive (001)-surface-induced bulk state, in the Γ - X direction of the 2D Brillouin zone, do exist and are characteristic of these systems. The existence of these states has been confirmed, independently, by two experimental groups and further evidence of our predictions has been more recently found. In order to continue with the description of these states, in this work, we briefly review the main characteristics of the electronic structure of the (001)-surfaces to up-date their analysis and we present new results concerning the existence of the same kind of states in Cu-based calcopyrites and at interfaces. This shows that, in general, the non-dispersive states occur in several, if not all, crystal surfaces, and, on general grounds, as the consequence of introducing to an infinite medium a frontier of any kind (not only with the vacuum). For that reason we propose here, to name them, more appropriately as Frontier Induced Semi-Infinite Medium (FISIM) states. We present in this paper two new interesting cases where the non-dispersive states appear. First, the (112)-oriented CuInSe_2 calcopyrite surface and, secondly, the interface CdTe/CdSe_xTe_(1-x) (x = 0.15) which, essentially, does not introduce the additional effects due to lattice mismatch so that the FISIM states are clearly seen. We have calculated them for broader range of x and for other II-VI and III-V semiconductor compounds to check that the result is general. The surface and the interface that we present here, allow us to discuss the characteristics of these newly found states, in more general way.
机译:在先前的工作中,我们已经讨论了一些II-VI宽带隙共混锌合金化合物的(001)取向表面(半无限介质)的价带电子结构。对于这些系统,除了已知的体带(hh,lh和自旋轨道带)以外,我们还发现了三个特征性表面共振。这些共振中的两个共振对应于表面的阴离子末端,第三个共振对应于阳离子的末端末端。我们已具体显示,在2D布里渊区的Γ-X方向上确实存在三个非分散(001)-表面诱导的本体态,它们是这些系统的特征。这些状态的存在已由两个实验小组独立确认,并且最近发现了我们预测的进一步证据。为了继续描述这些状态,在这项工作中,我们简要地回顾了(001)-表面的电子结构的主要特征以更新其分析,并提出了有关相同种类存在的新结果。铜基黄铜矿和界面中的状态分布。这表明,通常,非色散状态会在多个(如果不是全部)晶体表面中发生,并且一般情况下,由于向无限大的介质中引入了任何种类的边界(不仅是在真空中),还会出现非色散状态。 。因此,我们在此提议更恰当地命名它们,如边界诱导半无限介质(FISIM)所述。我们在本文中介绍了两个新的有趣情况,其中出现了非分散状态。首先是(112)取向的CuInSe_2黄铜矿表面,其次是CdTe / CdSe_xTe_(1-x)(x = 0.15)界面,由于晶格失配,该界面本质上不会引入额外的影响,因此FISIM状态为清楚地看到。我们针对x的更广泛范围以及其他II-VI和III-V半导体化合物计算了它们,以检查结果是否通用。我们在此展示的表面和界面使我们能够以更一般的方式讨论这些新发现状态的特征。

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