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Semiconductor device including first interface and second interface as an upper surface of a convex protruded from first interface and manufacturing device thereof

机译:包括第一界面和第二界面作为从第一界面突出的凸起的上表面的半导体器件及其制造装置

摘要

A semiconductor device includes a first n-type semiconductor layer, a p-type semiconductor layer, a second n-type semiconductor layer and a trench. The first n-type semiconductor layer includes a first interface and a second interface. The second interface forms an upper surface of a convex protruded from the first interface. The p-type semiconductor layer is stacked on the first n-type semiconductor layer and includes a first region stacked on the first interface and a second region stacked on the second interface. The first region is uniformly continuous with the second region. The second n-type semiconductor layer is stacked on the p-type semiconductor layer. The trench is depressed from the second n-type semiconductor layer through the p-type semiconductor layer into the convex of the first n-type semiconductor layer.
机译:半导体器件包括第一n型半导体层,p型半导体层,第二n型半导体层和沟槽。第一n型半导体层包括第一界面和第二界面。第二界面形成从第一界面突出的凸起的上表面。 p型半导体层堆叠在第一n型半导体层上,并且包括堆叠在第一界面上的第一区域和堆叠在第二界面上的第二区域。第一区域与第二区域均匀连续。第二n型半导体层堆叠在p型半导体层上。沟槽从第二n型半导体层通过p型半导体层凹陷到第一n型半导体层的凸面中。

著录项

  • 公开/公告号US9349856B2

    专利类型

  • 公开/公告日2016-05-24

    原文格式PDF

  • 申请/专利权人 TOYODA GOSEI CO. LTD.;

    申请/专利号US201414179412

  • 发明设计人 TORU OKA;

    申请日2014-02-12

  • 分类号H01L29/78;H01L29/66;H01L29/423;H01L29/10;H01L29/40;H01L29/417;H01L29/45;H01L29/06;H01L29/08;H01L29/20;

  • 国家 US

  • 入库时间 2022-08-21 14:30:21

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