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首页> 外文期刊>The European Physical Journal, A. Hadrons and Nuclei >Energy measurement and fragment identification using digital signals from partially depleted Si detectors
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Energy measurement and fragment identification using digital signals from partially depleted Si detectors

机译:利用部分耗尽的Si检测器的数字信号进行能量测量和碎片识别

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摘要

A study of identification properties of a Si-Si ΔE-E telescope exploiting an underdepleted residual-energy detector has been performed. Five different bias voltages have been used, one corresponding to full depletion, the others associated with a depleted layer ranging from 90% to 60% of the detector thickness. Fragment identification has been performed using either the ΔE-E technique or the Pulse Shape Analysis (PSA). Both detectors are reverse mounted: particles enter from the low field side, to enhance the PSA performance. The achieved charge and mass resolution has been quantitatively expressed using a Figure of Merit (FoM). Charge collection efficiency has been evaluated and the possibility of energy calibration corrections has been considered. We find that the ΔE-E performance is not affected by incomplete depletion even when only 60% of the wafer is depleted. Isotopic separation capability improves at lower bias voltages with respect to full depletion, though charge identification thresholds are higher than at full depletion. Good isotopic identification via PSA has been obtained from a partially depleted detector, whose doping uniformity is not good enough for isotopic identification at full depletion.
机译:已经对利用欠剩余能检测器的Si-SiΔE-E望远镜的识别特性进行了研究。已经使用了五种不同的偏置电压,一种对应于完全耗尽,另一种对应于耗尽层,其范围为检测器厚度的90%至60%。片段识别已使用ΔE-E技术或脉冲形状分析(PSA)进行。两个探测器都反向安装:粒子从低场侧进入,以增强PSA性能。使用品质因数(FoM)定量表示了达到的电荷和质量分辨率。已经评估了电荷收集效率,并考虑了能量校准校正的可能性。我们发现,即使只有60%的晶片被耗尽,ΔE-E性能也不会受到不完全耗尽的影响。尽管电荷识别阈值高于完全耗尽,但相对于完全耗尽,同位素分离能力​​在较低的偏置电压下会提高。通过PSA可以从部分耗尽的探测器获得良好的同位素识别,该探测器的掺杂均匀性不足以完全耗尽时进行同位素识别。

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