Electrotechnical laboratory (ETL) develops new ultrathin silicon dioxide fabrication - key technology for ultra-high-density device production

摘要

To produce ultra thin silicon oxide on silicon substrates - a key to manufacturing ultra-high-density devices - ETL developed an atmospheric-pressure-ozone generator to continuously supply ozone gas at high concentration at atmospheric pressure. The ozone forms a much thinner transition layer between the oxide layer and the silicon substrate than conventional thermally grown oxide and oxide production temperature is reduced using ozone. Together with progress in DRAM technology, design rules are steadily decreasing, and are expected to reach 0.01μm by 2005 and gate insulation membrane thickness is reduced to 1.5μm with a specific inductive capacity of 2.0 to 2.5.