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Magnetoresistive Effect in RCu_3Mn_4O_(12) Perovskite-Like Oxides

机译:RCu_3Mn_4O_(12)钙钛矿状氧化物中的磁阻效应

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摘要

The electrical properties of and the magnetoresistive effect in RCu_3Mn_4O_(12) (R = rare-earth ion or Th) are studied. In all compounds of this series, the magnetoresistive effect amounts to 20% at liquid nitrogen temperature in the presence of a field of 0.9 T. An increase in the magnetoresistance with decreasing temperature and a high sensitivity to weak magnetic fields at low temperatures point to the intergranular nature of the effect. The magnetoresistance shows a peak in the vicinity of the Curie temperature T_C. Based on the dependences of the magnetoresistance on an external magnetic field, it is assumed that the magnetoresistance peak near T_C related to the charge carrier scattering by magnetic inhomogeneities as in substituted orthomanganites. We believe that the magnetoresistance value near the magnetic ordering temperature depends on the synthesis conditions and the effect of the intergranular spacer on the transport properties of these compounds.
机译:研究了RCu_3Mn_4O_(12)(R =稀土离子或Th)的电学性质和磁阻效应。在该系列的所有化合物中,在存在0.9 T磁场的情况下,在液氮温度下的磁阻效应达到20%。磁阻随着温度的降低而增加,并且对低温下的弱磁场具有较高的敏感性,这表明了晶间性质的影响。磁阻在居里温度T_C附近显示出峰值。基于磁阻对外部磁场的依赖性,假定在T_C附近的磁阻峰与被取代的原锰矿中的磁不均匀性引起的电荷载流子的散射有关。我们认为,接近磁有序温度的磁阻值取决于合成条件以及晶间间隔基对这些化合物的传输性质的影响。

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