Field-Emission Diodes Based on Semiconductor-Polycrystalline Diamond Heterojunctions

摘要

A complex of electrophysical and technological studies of solid-state field-emission diodes is carried out. Emission comes from an array of nanometer objects near the semiconductor-polycrystalline diamond interface. The process route of the diode heterostructures includes the fabrication of nanometer masks and nanometer cone ( tip) arrays, as well as plasma-assisted growth of polycrystalline diamond films on the surface of structures with nanometer cone arrays. In field-emission diodes thus formed, a current density as high as 20 A/cm(2) is achieved at a threshold of field emission from the nanotip arrays into the diamond of about 0.5 V.