There has been an increasing interest in polycrystalline diamond (poly-C) based field-emission (FE) devices due to their huge application [1] potential and lower cost. In order to permit (a) lower turn-on voltage, (b) high accuracy of anode to emitter spacing, and (c) well defined emitter area, the recent research focus has been on devices with a built-in anode. This paper takes the built-in anode technology to an entirely new level, the so-called single-material FE device (SMFD) technology. SMFD made of p-type poly-C is shown in Fig. 1. The single-material technology was originally developed for Single-Material Microsystems (SMM), which is being reported for the first time for SMFD. The SMM concept uses undoped (109Ω· cm), lightly-doped (p, 1-10Ω · cm) and highly-doped (p+, 10-3Ω· cm) poly-C as mechanical, sensor and interconnect material, respectively.
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