Diamond heterojunction die diode

摘要

PURPOSE:To obtain a heterojunction diamond diode having good rectification characteristics of a small reverse current and a large forward current. CONSTITUTION:A P-type B-doped diamond semiconductor layer 2, a non-doped diamond insulating layer 3A of a thickness of 1mum or thinner and an N-type Si semiconductor layer 4 are formed in order on a P-type Si substrate 1 of a low resistance using a microwave CVD method. An Au electrode 5 is provided on the surface of the layer 4 and an ohmic electrode 6 is provided on the side of the rear of the substrate 1. In the state of a forward bias, an electric field, which is applied to the layer 3A, acts so as to promote an electron transfer and a hole transfer and in the state of a backward bias, a shoulder is generated in an energy band and a transfer of the holes in the layer 4 to the layer 2 is prevented. Thereby, superior rectification characteristics are obtained.