Modification of the Defect Structure and Electrophysical Properties in Zinc Selenide Crystals under the Action of an Alternating Electric Field

摘要

Modifications in the structure and electrophysical properties of ZnSe crystals subjected to a high alternating electric field of industrial frequency are investigated. It is established that such an action changes their defect structure and dielectric parameters. The latter exhibit different dependences on temperature and photoexcitation wavelength. The modifications are caused by ionic conduction, which is associated with local anomalies in the electric and elastic subsystems of the crystals.