Interaction of optical radiation with controlled concentration and static dielectric inhomogeneity in narrow-band semiconductors

摘要

It is shown that a controlled concentration inhomogeneity causing a deviation of a laser beam incident on it can be produced in some semiconductors. In indium antimonide, this effect appears in the case of temperature-electric instability in a magnetic field. In a GaAs-GaP-based compound, this effect occurs due to the inbuilt gradient of static dielectric permittivity and electron flow grouping. These effects make it possible to construct a deflector of infrared radiation.