Diffusion of As Ions and Self-Diffusion in Silicon during Implantation

摘要

Experimental concentration profiles of As ions in a silicon substrate at temperature of 20,600, and 1050 ℃ and ion current of 40 μA/cm~2, as well as at 1050 ℃ and 10μA/cm~2, are presented. On the basis of our an previously published experimental data, the process of radiation-stimulated ionic diffusion and self-diffusion in silicon is simulated. A number of interesting dependences, which are discussed in the conclusion of this study, are obtained.