XRay Diffraction Diagnostics Methods As Applied to Highly Doped Semiconductor Single Crystals

摘要

Si(As, P, B) and GaSb(Si) single crystals are used as examples to demonstrate the possibilities of methods of Xray diffraction for the diagnostics (examination of a real structure) of highly doped semicon ductor crystals. Prominence is given to characterizing the state of impurity: whether it is in a solid solution or at a certain stage of its decomposition. An optimum combination of Xray diffraction methods is found to obtain the most complete information on the microsegregation and structural heterogeneity in crystals with low and high Xray absorption. This combination is based on Xray diffraction topography and Xray diffrac tometry methods having an increased sensitivity to lattice strains.