Formation of atomically clean silicon surfaces in a low-energy low-pressure microwave plasma

摘要

The influence of the regimes and chemical composition of the low-energy highly ionized ECR plasma of a low-pressure microwave gas discharge on the etch rate and nanomorphology of differently oriented single-crystal silicon surfaces is studied. Model mechanisms of the processes controlling the etch rate and etch quality of atomically clean silicon surfaces with a desired orientation are considered.